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 TC120
PWM/PFM Step-Down Combination Regulator/Controller
Features
* Internal Switching Transistor Supports 600mA Output Current * External Switching Transistor Control for Output Currents of 2A+ * 300kHz Oscillator Frequency Supports Small Inductor Size * Short Circuit Protection * Built-In Undervoltage Lockout * 95% Typical Efficiency * Automatic Switchover to Current-Saving PFM Mode at Low Output Loads * Automatic Output Capacitor Discharge While in Shutdown * Programmable Soft-Start * Power-Saving Shutdown Mode * Small 8-Pin SOP Package
Package Type
8-Pin SOP
VIN 1 EXTW 2 CPC 3 SHDN/SS 4 8 LX EXT GND SENSE
TC120
7 6 5
General Description
TC120 is a 300kHz PFM/PWM step-down (Buck) DC/ DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but automatically converts to PFM at low output loads for greater efficiency. It requires only an external inductor, Schottky diode, and two capacitors to implement a step-down converter having a maximum output current of 600mA (VIN = 5V, VOUT = 3.3V). An external switching transistor (P-channel MOSFET) can be added to increase output current capability to support output loads of 2A or more. The TC120 consumes only 55A (max) of supply current (VOUT = 3.3V) and can be placed in shutdown mode by bringing the shutdown input (SHDN) low. During shutdown, the regulator is disabled, supply current is reduced to 2.5A (max), and VOUT is internally pulled to ground, discharging the output capacitor. Normal operation resumes when SHDN is brought high. Other features include a built-in undervoltage lockout (UVLO), an externally programmable soft start time, and output short circuit protection. The TC120 operates from a maximum input voltage of 10V and is available in a low-profile 8-Pin SOP package.
Applications
* * * * * * Portable Test Equipment Local Logic Supplies Portable Audio Systems Portable Scanners Palmtops Electronic Organizers
Device Selection Table
Part Number TC120503EHA TC120333EHA TC120303EHA Output Voltage (V) 5.0 3.3 3.0 Package Operating Temp. Range
8-Pin SOP -40C to +85C 8-Pin SOP -40C to +85C 8-Pin SOP -40C to +85C
Functional Block Diagram
VIN VIN CIN EXTW EXT LX D1 COUT L1 VOUT
TC120XX03
CPC GND
SHDN/SS CSS 4.7nF
SENSE
2002 Microchip Technology Inc.
DS21365B-page 1
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TC120
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings*
Power Supply Voltage (VIN).................... -0.3V to +12V Voltage on VOUT Pin ............................... -0.3V to +12V Voltage on LX, Boost Pins ................................... (VIN - 12V) to (VIN + 0.3V) Voltage on EXT1, EXT2, SHDN Pins .......................................... (-0.3V) to (VIN + 0.3V) LX Pin Current .............................................. 700mA pk EXT1, EXT2 Pin Current ...................................50mA Continuous Power Dissipation .........................300mW Operating Temperature Range............. -40C to +85C Storage Temperature Range .............. -40C to +150C
*Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
TC120 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Test circuit of Figure 3-1, TA = 25C, VIN = VR x 1.2, Note 1 unless otherwise noted. Symbol VOUT Parameter Output Voltage Min Typ Max Units V Test Conditions VOUT = 3.0V IOUT = 120mA (Note 1) VOUT = 3.3V IOUT = 132mA VOUT = 5.0V IOUT = 200mA VOUT = 3.0V VOUT = 3.3V VOUT = 5.0V VOUT = 3.0V VIN = VR x 1.05, no load VOUT = 3.3V VOUT = 5.0V No load, SHDN = 0V, (Note 2) Measured at EXT1 Pin (Note 2) No load, SHDN = 0V VOUT = 3.0V VOUT = VR x 0.9 (Note 2) VOUT = 3.3V VLX = VIN - 0.2V, 10 VOUT = 5.0V Resistor from LX to VIN, SHDN = VIN VOUT = 3.0V SHDN = VIH; EXT1 and EXT2 VOUT = 3.3V connected to 200 load, VOUT = 5.0V VEXT1 = VEXT2 = (VIN - 0.4V); VOUT = VIN (Note 2) VOUT = 3.0V SHDN = VIH; EXT1 and EXT2 VOUT = 3.3V pulled up through a series VOUT = 5.0V resistance of 200 to a voltage such that VEXT1, 2 = 0.4V Measured at EXT1 Pin, VIN = VOUT + 0.3V, IOUT = 20mA (Note 3) No load VIN > VR x 1.2
VR x 0.975 VR 0.5% VR x 1.025
VIN
Input Voltage
1.8 500 600 600 --
-- -- -- -- 52 55 71 1.5 -- 1.5 0.69 0.64 0.44 38 35 24 31 29 20 300
10.0 -- -- -- 82 86 110 2.5 2 2.5 0.94 0.85 0.58 52 47 32 41 37 26 345
V mA
IOUTMAX Maximum Output Current
IIN
Supply Current
A
ISHDN ILX
Shutdown Supply Current LX Pin Leakage Current
-- -- -- -- -- -- -- -- -- -- -- -- 255
A A
RDSON(L LX Pin ON Resistance
X)
REXTH
EXT1, EXT2 On Resistance to VIN
REXTL
EXT1, EXT2 On Resistance to GND
fOSC
Oscillator Frequency
kHz
DPWM DPFM
Note 1: 2: 3:
Maximum PWM Duty Cycle PFM Duty Cycle Efficiency
-- 15 --
-- 25 95
100 35 --
% % %
VR is the factory-programmed output voltage setting. No external components connected, except C SS. While operating in PWM Mode.
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DS21365B-page 2
2002 Microchip Technology Inc.
TC120
Electrical Characteristics: Test circuit of Figure 3-1, TA = 25C, VIN = VR x 1.2, Note 1 unless otherwise noted. Symbol VUVLO Parameter Minimum Operating Voltage Min 0.9 Typ -- Max 1.8 Units V Test Conditions VOUT = VR x 0.9 (Note 2), SHDN = VIN Measured with internal transistor in OFF state and VIN falling VOUT = 0V, (Note 2) VOUT = 0V, (Note 2) Time from VOUT = 0V to SHDN = VIL (Note 2)
VIH VIL tPRO tSS
Note 1: 2: 3:
SHDN Input Logic High, Threshold Voltage SHDN Input Logic Low, Threshold Voltage Short Circuit Protection Response Time Soft Start Time
0.65 -- 3 6
-- -- 5 10
-- 0.20 8 16
V V msec msec
VR is the factory-programmed output voltage setting. No external components connected, except C SS. While operating in PWM Mode.
2002 Microchip Technology Inc.
DS21365B-page 3
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TC120
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
Pin No. (8-Pin SOP) 1 2
PIN FUNCTION TABLE
Symbol VIN EXTW Unregulated supply input. Extended external switching transistor drive output. This output follows the timing on the EXT output with an additional 100nsec blanking time on both the leading and trailing edges. That is, this output transitions from high-to-low 100 nsec prior to the same transition on EXT; and transitions low-to-high 100nsec after the same transition on EXT; resulting in a longer external switch ON time. (See Section 3.9 External Switching Transistor Selection). Charge pump capacitor input. An inverting charge pump is formed by attaching a capacitor and diode to this input. (See Section 3.5 Improving High Load Efficiency In Regulator Operating Mode). Shutdown and soft-start control input. A soft start capacitor of 100pF (min) must be connected to this input. The soft start capacitor is charged by an internal A current source that gently ramps the TC120 into service. Shutdown control is best implemented with an external open collector (or open drain) switch. The TC120 enters shutdown when this input is low. During shutdown, the regulator is disabled, and supply current is reduced to less than 2.5A. Normal operation is restored when this input is open-circuited, and allowed to float high. (See Section 3.6 Low Power Shutdown Mode/Soft Start Input). Voltage sense input. This input must be connected to the output voltage node at the physical location that requires the tightest voltage regulation. Ground terminal. External switching transistor drive output. This output connects directly to the gate of an external P-channel MOSFET for applications requiring output currents greater than 600mA. The timing of this output exactly matches that of the gate drive for the internal P-channel transistor. This output can drive a maximum capacitance of 1000pF. (See Section 3.9 External Switching Transistor Selection). Inductor terminal. This pin is connected to the drain of the internal P-channel switching transistor. If the TC120 is operated as a regulator (i.e., using the internal switch); the inductor must be connected between this pin and the SENSE pin. Description
3
CPC
4
SHDN/SS
5 6 7
SENSE GND EXT
8
Lx
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DS21365B-page 4
2002 Microchip Technology Inc.
TC120
3.0 DETAILED DESCRIPTION
3.2 Input Bypass Capacitor
The TC120 can be operated as an integrated stepdown regulator (using the internal switching transistor); or as a step-down regulator controller (using an external switching transistor). When operating as an integrated regulator, the only required external components are a Schottky diode, inductor and an output capacitor. Operating in this configuration, the TC120 is capable of supporting output load currents to a maximum of 600mA with operating efficiencies above 85%. Efficiencies at high loads can be further improved by using the on-board charge pump circuit to pull the gate of the internal switching transistor below ground for the lowest possible ON resistance. (For more information, see Section 3.5 Improving High Load Efficiency in Regulator Operating Mode). Higher output currents are achieved by operating the TC120 with an external P-channel switching transistor (controller mode). In this operating configuration, the maximum output current is determined primarily by the ON resistance of the P-channel switch and the series resistance of the inductor. Using an input bypass capacitor reduces peak current transients drawn from the input supply, and reduces the switching noise generated by the regulator. The source impedance of the input supply determines the size of the capacitor that should be used.
3.3
Output Capacitor
The effective series resistance of the output capacitor directly affects the amplitude of the output voltage ripple. (The product of the peak inductor current and the ESR determines output ripple amplitude.) Therefore, a capacitor with the lowest possible ESR should be selected. Smaller capacitors are acceptable for light loads or in applications where ripple is not a concern. A 47F Tantalum capacitor is recommended for most applications. The Sprague 595D series of tantalum capacitors are amongst the smallest of all low ESR surface mount capacitors available. Table 3-1 lists suggested components and suppliers.
3.4
Catch Diode
FIGURE 3-1:
VIN + - 47F/10V Tantalum VIN EXTW
TEST CIRCUIT
L1 22H LX + IN5817 EXT - COUT 47F/10V Tantalum VOUT
TC120XX03
CPC GND
The high operating frequency of the TC120 requires a high-speed diode. Schottky diodes such as the MA737 or 1N5817 through 1N5823 (and the equivalent surface mount versions) are recommended. Select a diode whose average current rating is greater than the peak inductor current; and whose voltage rating is higher than VINMAX.
SHDN/SS CSS 4.7nF
SENSE
3.5
Improving High Load Efficiency in Regulator Operating Mode
3.1
Inductor Selection
Selecting the proper inductor value is a trade-off between physical size and power conversion requirements. Lower value inductors cost less, but result in higher ripple current and core losses. They are also more prone to saturate since the coil current ramps faster and could overshoot the desired peak value. This not only reduces efficiency, but could also cause the current rating of the external components to be exceeded. Larger inductor values reduce both ripple current and core losses, but are larger in physical size and tend to increase the start-up time slightly. A 22H inductor is the best overall compromise and is recommended for use with the TC120. For highest efficiency, use inductors with a low DC resistance (less than 20m). To minimize radiated noise, consider using a toroid, pot core or shielded-bobbin inductor.
If the TC120 is operated at high output loads most (or all) of the time, efficiency can be improved with the addition of two components. Ordinarily, the voltage swing on the gate of the internal P-channel transistor is from ground to VIN. By adding a capacitor and diode as shown in Figure 3-2, an inverting charge pump is formed, enabling the internal gate voltage to swing from a negative voltage to +VIN. This increased drive lowers the RDSON of the internal transistor, improving efficiency at high output currents. Care must be taken to ensure the voltage measured between VIN and CPC does not exceed an absolute value of 10V. While this is not a problem at values of VIN at (or below) 5V, higher VIN values will require the addition of a clamping mechanism (such as a Zener diode) to limit the voltage as described. While this technique improves efficiency at high output loads, it is at the expense of low load efficiency because energy is expended charging and discharging the charge pump capacitor. This technique is therefore not recommended for applications that operate the TC120 at low output currents for extended time periods. If unused, CPC must be grounded.
2002 Microchip Technology Inc.
DS21365B-page 5
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TC120
3.6 Low Power Shutdown Mode/Soft Start Input 3.9 External Switching Transistor Selection
The SHDN/SS input acts as both the shutdown control and the node for the external soft start capacitor, which is charged by an internal 1A current source. A value of 4700pF (100pF minimum) is recommended for the soft start capacitor. Failure to do this may cause large overshoot voltages and/or large inrush currents resulting in possible instability. The TC120 enters a low power shutdown mode when SHDN/SS is brought low. While in shutdown, the oscillator is disabled and the output discharge switch is turned on, discharging the output capacitor. Figure 3-3 shows the recommended interface circuits to the SHDN/SS input. As shown, the SHDN/SS input should be controlled using an open collector (or open drain) device, such that the SHDN/ SS input is grounded for shutdown mode, and opencircuited for normal operation (Figure 3-3a). If a CMOS device is used to control shutdown (Figure 3-3b), the value of R1 and CSS should be chosen such that the voltage on SHDN/SS rises from ground to 0.65V in 1.5msec (Figure 3-4). If shutdown is not used, C SS must still be connected as shown in Figure 3-3c and Figure 3-3d. SHDN/SS may be pulled up with a resistor (Figure 3-3c) as long as the values of RSS and C SS provide the approximate charging characteristic on power up shown in Figure 3-4. CSS only may also be connected as shown in Figure 3-3d with CSS chosen at 4700pF (minimum 100pF).
EXT is a complimentary output with a maximum ON resistances of 32 to VDD when high and 26 to ground when low, at VOUT = 5V. It is designed to directly drive a P-channel MOSFET (Figure 3-5). The P-channel MOSFET selection is determined mainly by the on-resistance, gate-source threshold and gate charge requirements. Also, the drain-to-source and gate-to-source breakdown voltage ratings must be greater than VINMAX. The total gate charge specification should be less than 100nC for best efficiency. The MOSFET must be capable of handling the required peak inductor current, and should have a very low onresistance at that current. For example, a Si9430 MOSFET has a drain-to-source rating of -20V, and a typical on-resistance rDSON of 0.07 at 2A, with VGS = -4.5V. (EXTW (Figure 3-6) may be gated with external circuitry to add blanking, or as an auxiliary timing signal.) Table 3-1 lists suggested components and suppliers.
3.10
Board Layout Guidelines
3.7
Undervoltage Lockout (UVLO)
The TC120 is disabled whenever VIN is below the undervoltage lockout threshold. This threshold is equal to the guaranteed minimum operating voltage for the TC120 (i.e., 2.2V). When UVLO is active, the TC120 is completely disabled.
As with all inductive switching regulators, the TC120 generates fast switching waveforms, which radiate noise. Interconnecting lead lengths should be minimized to keep stray capacitance, trace resistance and radiated noise as low as possible. In addition, the GND pin, input bypass capacitor and output filter capacitor ground leads should be connected to a single point. The input capacitor should be placed as close to power and ground pins of the TC120 as possible. The length of the EXT trace must also be kept as short as possible.
3.8
Short Circuit Protection
Upon detection of an output short circuit condition, the TC120 reduces the PWM duty cycle to a minimum value using its internal protection timer. The sequence of events is as follows: when an output voltage decrease to near zero is detected (as the result of an overload), the internal (5msec) protection timer is started. If the output voltage has not recovered to nominal value prior to the expiration of the protection timer, the TC120 is momentarily shut down by dedicated, internal circuitry. Immediately following this action, the soft start sequence is engaged in an attempt to re-start the TC120. If the output short circuit is removed, normal operation is automatically restored. If the short circuit is still present, the timed self-shutdown sequence described above is repeated.
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DS21365B-page 6
2002 Microchip Technology Inc.
TC120
TABLE 3-1:
Type Surface Mount
SUGGESTED COMPONENTS AND SUPPLIERS
Inductors Sumida CD54 Series CDRH Series Coilcraft DO Series Capacitors AVX TPS Series Sprague 595D Series Diodes ON Semiconductor MBRS340T3 Nihon NSQ Series Matsushita MA737 Sanyo OS-CON Series Nichicon PL Series United Chemi-Conv LXF Series IRC OAR Series ON Semiconductor TMOS Power MOSFETs Transistors Silconix Little Foot MOSFET Series Zetex FZT749 PNP Bipolar Transistor Toshiba 2SA1213 PNP Transistor
Miniature Through-Hole Standard Through-Hole
Sumida RCH Series Coilcraft PCH Series
FIGURE 3-2:
VIN 5V
TC120 WITH ADDED COMPONENTS FOR IMPROVED EFFICIENCY AT HIGH OUTPUT CURRENTS
VIN > 5V
CP 2200 pF Ceramic
VIN EXTW
LX
EXT
CP 2200 pF Ceramic
VIN EXTW
LX
EXT
TC120XX03
CPC D1 IN5817 GND 10V Zener Diode D1 IN5817
TC120XX03
CPC GND
SHDN/SS
SENSE
SHDN/SS
SENSE
a) For VIN 5V
b) For VIN > 5V
2002 Microchip Technology Inc.
DS21365B-page 7
(c)
TC120
FIGURE 3-3: SHUTDOWN CONTROL CIRCUITS
TC120XX03
SHDN/SS 2N2222 CSS 4.7nF SHDN ON OFF
VIN
CMOS Gate R1 CSS
TC120XX03
SHDN ON OFF
47K
SHDN/SS
a) Using an Open Collector Device
b) Using a Complementary Output Device
VIN
TC120XX03
RSS SHDN/SS CSS CSS 4.7nF
TC120XX03
SHDN/SS
c) Shutdown Not Used - with Pull-Up
d) Shutdown Not Used - No Pull-Up
FIGURE 3-4:
SOFT START TIMING
ON Shutdown Signal OFF
0.65V
X
SHDN/SS
0V 1.5msec
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DS21365B-page 8
2002 Microchip Technology Inc.
TC120
FIGURE 3-5: USING EXTERNAL TRANSISTOR SWITCH
VIN
VIN EXTW
LX
CIN 47F Tantalum
EXT L1 22H VOUT
TC120XX03
CPC GND
SHDN/SS CSS 4.7 nF
SENSE IN5817
COUT 47F Tantalum
FIGURE 3-6:
EXTERNAL (EXT) AND EXTENDED EXTERNAL (EXTW) SWITCHING TRANSISTOR DRIVE OUTPUT
EXT
EXTW
100nsec
100nsec
2002 Microchip Technology Inc.
DS21365B-page 9
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TC120
4.0
4.1
PACKAGING INFORMATION
Package Marking Information
Package marking data not available at this time.
4.2
Taping Form
Component Taping Orientation for 8-Pin SOP Devices
User Direction of Feed
PIN 1
W
P Standard Reel Component Orientation for TR Suffix Device
Carrier Tape, Number of Components Per Reel and Reel Size
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
8-Pin SOP
12 mm
8 mm
1000
7 in
4.3
Package Dimensions
8-Pin SOP
PIN 1
.181 (4.60) .165 (4.20)
.256 (6.50) .232 (5.90)
.051 (1.30) .049 (1.24) .217 (5.50) .193 (4.90) .069 (1.75) .055 (1.40) .020 (0.50) .012 (0.30) .008 (0.20) .000 (0.00) .010 (0.25) .004 (0.10) .018 (0.45) .014 (0.35) Dimensions: inches (mm)
8 MAX.
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DS21365B-page 10
2002 Microchip Technology Inc.
TC120
Sales and Support
Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21365B-page11
TC120
NOTES:
DS21365B-page12
2002 Microchip Technology Inc.
TC120
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company's quality system processes and procedures are QS-9000 compliant for its PICmicro (R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21365B-page 13
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05/01/02
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DS21365B-page 14
2002 Microchip Technology Inc.


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